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UV LED by Nitride Semiconductor Co., Ltd.
Ultraviolet LED / UV LED

Applications Benefits
Ultraviolet Lamp 370nm Lamp Dimensions
Lamp Technical Data Chip Specifications (370nm)
NS370 Wafer

Ultraviolet Light Emitting Diodes / UV LED have numerous applications across various industry fields. Applications include displays, lightings / UV lamp, spectro-fluorometry, photo-catalytic reactions, high-resolution optics, counterfeit detection, chemical detection, medical applications, UV air purifier, along with countless other UV activation related applications. UV LED can offer sharper peak profiles, lower power consumption, longer life, and more compact profiles compared to conventional UV lamp.

Space propagation based optical transmission is suitable for short-range communications because they do not rely on cables or electrical waves. However, due to interference from sunlight and rays from light producing equipment, they can only be used in special environments. Because the intensity of sunlight and fluorescent lamps becomes abruptly weaker at wavelengths shorter than 380nm, light sources with wavelengths less than 380nm enable effective signal transmission in the dark.

UV rays has been widely used for erasing EPROMs (Electrically Programmable Read Only Memory), i.e. by exposing the EPROM under UV rays for a few seconds. During semiconductor manufacturing, specifically the lithography stage, UV rays is used to expose the photoresist and define mask patterns on the wafer. During counterfeit detection, UV rays will be reflected by counterfeit bills, and an UV sensor will activate the alarm. UV rays can also be used for chemical detection and the analysis of human genomes.

Recently, UV rays have been found effective in cancer treatment, and various research programs have been underway. Applications to build environmental equipment through the use of UV rays, in conjunction with photo-catalytic reactions to decompose toxic substances into non-harmful components, are attracting attention within the industry as well.

Large-scale UV lamp units currently available in the marketplace have limited applications due to their size. If a 0.3mm UV emitting device is manufactured, numerous other applications can be developed. UV detectors without sensitivity to sunlight have been developed at many research centers, however, UV LED as a source has not been widely recognized.

We have recognized this need in the marketplace and would like to offer our products in an attempt to help develop these applications that can benefit from UV LED technology. Below, we provide some technical data of our UV LED applications on UV lamp.


Applications

  • Counterfeit detection
  • Chemical Detection (Organic / Inorganic substance)
  • Medical applications
  • Photo-catalytic reactions
  • UV Air Purifier
  • High-resolution optics
  • UV activated applications
  • Lighting
  • Displays

Benefits

  • Sharp peak profile
  • Longer life
  • Less power consumption
  • Compact

UV Lamp 370nm

Absolute Maximum Ratings (Ta = 25 Degrees C)
Parameters Symbol Value Unit
Power Dissipation Pd 120 mW
Continuous Forward Current If 25 mA
Peak Forward Current #1 Ifm 100 mA
Reverse Voltage Vr 5 V
Operating Temperature Topr -30 to +80 Degree C
Storage Temperature Tstg -40 to + 100 Degree C
Soldering Temperature Tsol 260 (within 5 seconds) Degree C

Electro-Optical Characteristics (Ta = 25 Degrees C)
Parameters Symbol Value Min. Typ. Max. Unit
Forward Voltage Vf If=20mA - 3,6 4 V
Reverse Current Ir Vr=5V     10 µA
Radiant Flux P0 If=20mA 0,8 0 1 mW
Viewing Angle If=20mA   15 - deg.
Peak Wavelength If=20mA 370 373 380 nm
Spectrum Radiation Bandwidth If=20mA   15   nm


UV Lamp Dimensions

NS370DS      Dimensions of lamps (Unit: mm)

UV lamp dimension : Type ULK
Type UFK
Type ULA
Type UFA


UV Lamp Technical Data

1. Forward Voltage vs. Forward Current
Forward Voltage vs. Forward Current
2. Peak Wavelength vs. Relative Intensity
Peak Wavelength vs. Relative Intensity
3. Forward Current vs. Relative Intensity
Forward Current vs. Relative Intensity
4. Ambient Temperature vs. Relative Intensity
Ambient Temperature vs. Relative Intensity
5. Ambient Temperature vs. Forward Current
Ambient Temperature vs. Forward Current
6. Radiation Spectrum
Radiation Spectrum

UV LED Chip Specifications (370nm)

Chip Specifications
Subject Value Unit
Wd at 20 mA 375 ± 5 nm
Iv at 20 mA 0.7-1.0 mW
Vf at 20 mA 3,5 V
Vr at 10 µA 25 V
FWHM 10 nm
Mechanical Specifications
Description Dimensions Unit
Emission area 270 x 250 µm
Bottom area 350 x 350 ± 20 µm
Chip thickness 75 ± 10 µm
Electrodes Spacing 165 µm
N-contact 100 with Al alloy
P-contact 100 (R = 50) with Au alloy

NS370 Wafer


NS370 Wafer Specification

Thickness of Epi-layer 3.5-4 µm
Total Thickness 330µm ± 50µm
Wafer Diameter 50µm
Initial Substrate c-plane sapphire    
Orientation <0001>
Activation Annealing for p-layer      No

Chip Specification

class="text3"Item Symbol Condition     Min. Typ. Max. Unit
Peak Wavelength
lP IF=20mA
370
373 380 nm
Forward Voltage VF IF=20mA
3.5 3.8 4 V
Reverse Voltage VR IR=10µA 15 - - V
Full Width at Half Maximum      Dl IF=20mA 10 13 20 nm
Output Power PO IF=20mA   1   mW
  1. Typical data using our process condition. Chip size : 350µm x 350µm (Emission Area : 270µm x 250µm )
  2. Output power is measured in integrating sphere with chip mounted on TO-18 header.

UV LED Chip

NS365

Part No. / Iv@20mA
                     (mW)
Wd @20mA (nm) Vf @20mA
(V)
Vr @10µA
(V)
FWHM
(nm)
NS365CS / 0.5-0.7
NS365CB / 0.7-1.0
364-370 4.5 25 13

NS370

Part No. / Iv@20mA
                     (mW)
Wd @20mA (nm) Vf @20mA
(V)
Vr @10µA
(V)
FWHM
(nm)
NS370CS / 0.5-0.7
NS370CB / 0.7-1.0
NS370CUB / 1.0-1.5
370-375 3.8 25 13

NS375

Part No. / Iv@20mA
                     (mW)
Wd @20mA (nm) Vf @20mA
(V)
Vr @10µA
(V)
FWHM
(nm)
NS375CS / 0.5-0.7
NS375CB / 0.7-1.0
NS375CUB / 1.0-1.5
375-380
3.8 25 13
  1. Typical data using our process condition.
  2. Output power is measured in integrating sphere with chip mounted on TO-18 header.
Description Dimension
Emission Area
270µm x 250µm
Bottom Area 350µm x 350µm ±20µm
Chip Thickness
75µm ± 10µm
N-Contact 100 with Al alloy
P-Contact 100(R=50) with Au alloy
Electrodes Spacing
165 µm
Also try: light emitting diodes | led light | led bulbs | uv lamps | uv led | light emitting diode

 

Contact Marubeni Sunnyvale

For more information on our UV lamp and UV LED, please contact Marubeni Sunnyvale and we will send you a full brochure.