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Properties of
GaN templates on sapphire |
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Optical
properties
Photoluminescence spectra
measured at 295 K for 17 microns thick GaN layer grown on sapphire by HVPE
technology. The full width
at a half maximum of edge luminescence peak is about 1.8 meV (15 K). (courtesy of Prof. Michael
Reshchikov, Virginia Commonwealth University)
Photoluminescence spectrum of GaN epitaxial layer
measured at 80 K. Surface
morphology
Optical photograph of as grown surface for 17
microns thick GaN layer grown on sapphire by HVPE technology
AFM data for as-grown surface of 17 microns thick GaN
layer grown by HVPE technology on sapphire substrate. For 10x10 microns scan, the Rms
roughness is less than 0.5 nm. (courtesy of Prof. Sergey Nikishin, Texas
Technical University). |
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Background impurities
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Depth profile for concentration Nd-Na in undoped GaN epitaxial layer |
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Copyright (c) 1997-2005 by TDI, Inc. |
