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TDI Demonstrates One Square Centimeter SiC Diode Chip |
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SILVER SPRING, MD -- (MARKET WIRE) -- 09/12/2003 -- Technologies and Devices International Inc. (TDI), a privately held Maryland corporation, today announced a significant step in continuing development of new Silicon Carbide (SiC) power electronic products and demonstrated one square centimeter SiC diode chip. The chip is a 4H-SiC Schottky diode fabricated to block 300 V and capable for forward currents up to 300 A. The chip was fabricated based on 4H-SiC wafer with defect density substantially reduced by proprietary defect healing technology developed at TDI. This technology converts standard commercial SiC wafers in to a product with extremely low density of micropipes, device-killing defects inherent to silicon carbide materials. Silicon carbide is a material considered as a key semiconductor for the next generation of power electronics for long time. The main factor limiting development and commercialization of high power SiC devices is a high defect density in SiC substrates and device structures leading to a relatively small device operating area and results in a low forward current. Typical size of commercial SiC devices does not exceed a few millimeters in diameter. Demonstration of SiC device having operating area of one square centimeter is an important step in the development of electronic components for megawatt switching operations. Dr. Alexander Syrkin, Silicon Carbide technology key specialist at TDI, comments, "We believe that large area Single Chip SiC Schottky diodes are enabling components for ultra-fast power electronics. Developed technology opens an opportunity to fabricate silicon carbide devices with very large operating areas. We expect growing interest of power module manufactures in large area SiC Schottky dies and rapid commercialization of this product." Professor Michael S. Shur, Director, Center for Broadband Data Transport at RPI, agrees, "This is an important development in Schottky diode technology for high-power applications." Dr. Vladimir Dmitriev, President and CEO of TDI, Inc., stated, "TDI has been working on the development of large area power SiC devices for a few years in collaboration with a number organizations. Particularly, joint effort with Prof. Jansen's team from Linkoping University has been very effective. Details of this development will be reported next month at the International Conference on Silicon Carbide and Related Materials in Lyon, France. We are very pleased with this result and plan to demonstrate packaged prototype large area SiC devices in a few months." TDI Inc. is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, and SiC. TDI is developing various compound semiconductor materials and devices, primarily, for applications in short wavelength optoelectronics and power electronics.
TDI, Inc. |
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Copyright © 2003 TDI, Inc. |