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TDI Releases New Semi-Insulating Substrates for GaN Devices |
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February 25, 2003… Silver Spring, Maryland, USA... Technologies and Devices International, Inc. (TDI),a privately held Maryland corporation, today announced the availability of novel semi-insulating substrate materials for nitride-based semiconductor devices. The group-III nitride compound semiconductor material family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their alloys. The product consists of an approximately 20 micron thick single crystal AlN film deposited on a silicon carbide (SiC) substrate. The company is currently offering 2 inch diameter samples and ramping up its production for larger size wafers. The new products are targeted for substrate applications for ultra high power AlGaN/GaN high electron mobility transistors (HEMTs) and high power blue and ultra violet (UV) light emitters, light emitting diodes (LEDs) and laser diodes (LDs). These novel substrates have very good lattice and thermal match to GaN-based devices and combine the unique thermal conductivity of SiC and exceptionally high intrinsic electrical resistivity of AlN. This material is an excellent, cost effective semi insulating substrate for a variety of nitride semiconductor devices. Vladimir Dmitriev, President and CEO of TDI stated, “Substrate related issues in nitride electronics have been well-known for some time. Due to lack of native AlN and GaN substrates, nitride devices are fabricated on foreign substrates, which are not lattice and thermally matched to the device structures. Use of foreign substrates limits device performance, reliability, and eventually cause device degradation. Unique technology recently developed at TDI allows us to put in production these new substrate materials. We believe new substrates will allow the nitride community to speed up development and commercialization of advanced nitride semiconductor devices.” Nitride semiconductors are used for fabrication of a new generation of electronic devices such as high power, high frequency transistors for wireless communications, and novel optoelectronic devices such as blue and UV LEDs and LDs, and UV photodetectors for applications in cellular phones, giant displays, solid state lighting and optical storage systems including ultra large capacity DVD. Potential military applications for GaN-based devices include multifunction high frequency electronics, radar, electronic surveillance, high-speed communications, bio defense, missile defense, and smart weapons. About TDI Contact for more information:
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Copyright © 2003 TDI, Inc. |