MOVPE Gallium Arsenide Wafers
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MOVPE GaAs Wafers for HEMTs
| Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating
LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for
both ion-implantation and epitaxial growth. Our high quality, long
GaAs single-crystals provide the advantages of high yield and efficiency
necessary to produce high performance GaAs devices such as GaAs FETs
and MMICs used in personal mobile communication system, etc.. |
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| Growth Method |
As the name implies, the GaAs wafer is growth via MOVPE (Metal Organic
Vapor Phase Epitaxial) process.
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| Features |
Main features of our MOVPE Wafers for HEMTs are:
- Good reproducibility and stability on the characteristics of 2-DEG
layer
- High Ns (surface concentration) and µ (carrier
mobility)
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| Applications |
Main Applications of our MOVPE Wafers for HEMTs are:
- HEMTs
- Pseudomorphic HEMTs
- DH (Double-Hetero) - P-HEMTs
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| Contact
Address |
For more information on our MOVPE GaAs wafers, you
can contact the following address :
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Manufacturer :
Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997
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Representative :
Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730
Contact Marubeni Sunnyvale
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