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MOVPE Gallium Arsenide Wafers

MOVPE GaAs Wafers for HBTs

Hitachi Cable, released InGaP emitter HBT (Hetero-junction Bipolar Transistor) epi-wafers as our newest product in October 1999 and have been mass-producing since that date. We have already been producing large volumes of AlGaAs emitter HBT epi-wafers grown by the MOVPE method. Please refer to the "What's New" section report entitled "High performance AlGaAs HBT MOVPE wafers" published in April 1998 for further information

Growth Method

As the name implies, the GaAs wafer is growth via MOVPE (Metal Organic Vapor Phase Epitaxial) process.

Features

Main features of our MOVPE GaAs Wafers for HBTs are :

High Carbon doped base layer
Low contact resistance of Se doped InGaAs layer
High current gain
Good reproducibility

Applications

Main Applications of our MOVPE GaAs Wafers for FETs are :

Low-noise amplifiers
Power amplifiers

Contact Address

For more information on our MOVPE GaAs wafers, you can contact the following address :

Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730

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