| |  |
MOVPE Gallium Arsenide Wafers
|
MOVPE GaAs Wafers for FETs
| Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating
LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable
for both ion-implantation and epitaxial growth. Our high quality,
long single crystal GaAs wafers provide the advantages of high
yield and efficiency necessary to produce high performance GaAs
devices such as GaAs FETs and MMICs used in personal mobile
communication system, etc.. |
|
|
| Growth
Method |
As the name implies, the GaAs wafer is growth via MOVPE (Metal Organic
Vapor Phase Epitaxial) process.
|
| Features |
Main features of our MOVPE GaAs Wafers for FETs (Field
Effect Transistor) are :
- Good Uniformity and reproducibility
- High efficiency and high breakdown voltage
|
| Applications |
Main Applications of our MOVPE GaAs Wafers for FETs are :
- Low-noise FETs
- Power FETs
|
| Contact
Address |
For more information on our MOVPE GaAs wafers, you
can contact the following address :
| |
Manufacturer :
Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997
|
Representative :
Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730
Contact Marubeni Sunnyvale
|
|
|
|
|
