Hitachi Cable America Inc. supplies high quality semi-conductive
gallium arsenide wafers (GaAs wafers) suitable for epitaxial
growth (LPE, MOVPE, MBE). The high quality GaAs single
crystal wafers provide the advantages of high yield and efficiency
necessary to produce high-performance optical GaAs devices.
GaAs Single
Crystal Wafers
Semi-conductive single crystal gallium arsenide wafers suitable
for epitaxial growth (LPE, MOVPE, MBE). Our high quality GaAs single
crystal wafers provide the advantages of high yield and efficiency
necessary to produce high-performance optical GaAs devices.
Available both n-type and p-type.
Semi-Insulating
GaAs Single Crystal Wafers
Semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs
wafers suitable for both ion-implantation and epitaxial growth.
Our high quality, AU grade (Advanced Uniformity), long
GaAs single crystal wafers provide the advantages of high yield
and efficiency necessary to produce high performance GaAs devices
such as GaAs FETs and MMICs used in personal mobile communication
system, etc.
Available wafer size : 3", 4" and 6"
AlGaAs
Epitaxial Wafers for Red LEDs
Aluminum gallium arsenide wafers (AlGaAs wafers) for
various LED chips or lamps for indoor and outdoor displays. Also
suitable for chip LEDs for surface mounting technology.
AlGaAs Epitaxial
Wafers for LDs
Aluminum gallium arsenide wafers (AlGaAs wafers) with
good statbility on the epitaxial layer characteristics. The epitaxial wafers
also feature good uniformity in thickness, AlAs Mole-fraction,
carrier concentration.
Thus, it is suitable for LDs applications.
MOVPE GaAs Wafers
for HEMTs
MOVPE GaAs wafers with good stability on the characteristics
of 2-DEG layer.
The epitaxial wafers main application is for HEMTs.
MOVPE GaAs wafers with high efficiency and high breakdown voltage.
The epitaxial wafers main application is for low noise FET and power FET applications.
MOVPE GaAs Wafers
for HBTs
Hitachi Cable Ltd. released InGaP emitter HBT (Hetero-junction
Bipolar Transistor) epitaxial GaAs wafers in October 1999 and have
been mass-producing since that date. We have already been producing
large volumes of AlGaAs emitter HBT epitaxial wafers grown by the
MOVPE method.
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