AlGaAs Epitaxial Wafers

AlGaAs Epitaxial Wafers for Red LEDs

Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth. Our high quality, long GaAs single-crystals provide the advantages of high yield and efficiency necessary to produce high performance GaAs devices such as GaAs FETs and MMICs used in personal mobile communication system, etc..

Main features of our AlGaAs Epitaxial Wafers for Red LEDs are :

• High brightness, excellent uniformity and repeatability
• Wide brightness range with single or double hetero-structure (SH or DH) and substrate-removed DH structure (UDH)
• Both high chip-yield and easy-handling by original quasi-round shape.
  

Main Applications of our AlGaAs Epitaxial Wafers for Red LEDs are :

• Various LED chips or lamps for indoor and outdoor displays.
• Chip LEDs for surface mounting technology.

For more information on our AlGaAs epitaxial wafers, you can contact the following address :