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AlGaAs Epitaxial Wafers
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AlGaAs Epitaxial Wafers for LDs
| Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating
LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for
both ion-implantation and epitaxial growth. Our high quality, long
GaAs single-crystals provide the advantages of high yield and efficiency
necessary to produce high performance GaAs devices such as GaAs FETs
and MMICs used in personal mobile communication system, etc.. |
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| Growth Method |
This GaAs wafer is growth via MOVPE (Metal Organic
Vapor Phase Epitaxial) process
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| Features |
Main features of our AlGaAs epitaxial wafers for LDs
are:
- Good reproducibility and stability in epitaxial
layer characteristics
- Good uniformity in thickness, AlAs Mole-fraction,
carrier concentration
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| Applications |
With its excellent characteristics, this AlGaAs epitaxial wafer main
is most suitable for LDs applications.
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| Contact
Address |
For more information on our AlGaAs epitaxial wafers,
you can contact the following address :
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Manufacturer :
Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997
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Representative :
Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730
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